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| DISCRETE SEMICONDUCTORS DATA SHEET PMEGXX10BEA; PMEGXX10BEV 1 A very low VF MEGA Schottky barrier rectifier Product data sheet Supersedes data of 2004 Apr 02 2004 Jun 14 NXP Semiconductors Product data sheet 1 A very low VF MEGA Schottky barrier rectifier FEATURES * Forward current: 1 A * Reverse voltages: 20 V, 30 V, 40 V * Very low forward voltage * Ultra small and very small plastic SMD package * Power dissipation comparable to SOT23. APPLICATIONS * High efficiency DC-to-DC conversion * Voltage clamping * Protection circuits * Low voltage rectification * Blocking diodes * Low power consumption applications. DESCRIPTION Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a very small SOD323 (SC-76) and ultra small SOT666 SMD plastic package. MARKING TYPE NUMBER PMEG2010BEA PMEG3010BEA PMEG4010BEA PMEG2010BEV PMEG3010BEV PMEG4010BEV MARKING CODE V1 V2 V3 G6 G5 G4 6 5 4 PMEGXX10BEA; PMEGXX10BEV QUICK REFERENCE DATA SYMBOL IF VR PINNING PIN PMEGXX10BEA (see Fig.1) 1 2 PMEGXX10BEV (see Fig.2) 1, 2, 5, 6 3, 4 cathode anode cathode anode DESCRIPTION PARAMETER forward current reverse voltage 1 20; 30; 40 MAX. UNIT A V 1 2 1 2 sym001 The marking bar indicates the cathode. Fig.1 Simplified outline (SOD323; SC-76) and symbol. 1, 2 5, 6 3, 4 sym038 1 2 3 Fig.2 Simplified outline (SOT666) and symbol. 2004 Jun 14 2 NXP Semiconductors Product data sheet 1 A very low VF MEGA Schottky barrier rectifier ORDERING INFORMATION PACKAGE TYPE NUMBER NAME PMEGXX10BEA PMEGXX10BEV - DESCRIPTION plastic surface mounted package; 2 leads plastic surface mounted package; 6 leads PMEGXX10BEA; PMEGXX10BEV VERSION SOD323 SOT666 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VR PARAMETER continuous reverse voltage PMEG2010BEA/PMEG2010BEV PMEG3010BEA/PMEG3010BEV PMEG4010BEA/PMEG4010BEV IF IFRM IFSM Tj Tamb Tstg Notes 1. Refer to SOD323 (SC-76) and SOT666 standard mounting conditions. 2. Only valid if pins 3 and 4 are connected in parallel (SOT666 package). 3. For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse power losses PR are a significant part of the total power losses. Nomograms for determining the reverse power losses PR and IF(AV) rating will be available on request. continuous forward current repetitive peak forward current non-repetitive peak forward current junction temperature operating ambient temperature storage temperature Ts 55 C; note 1 tp 1 ms; 0.5; note 2 tp = 8 ms; square wave; note 2 note 3 note 3 - - - - - - - -65 -65 20 30 40 1 3.5 10 150 +150 +150 V V V A A A C C C CONDITIONS MIN. MAX. UNIT 2004 Jun 14 3 NXP Semiconductors Product data sheet 1 A very low VF MEGA Schottky barrier rectifier THERMAL CHARACTERISTICS SYMBOL PMEGXX10BEA (SOD323) Rth(j-a) Rth(j-s) thermal resistance from junction to ambient thermal resistance from junction to soldering point in free air; notes 1 and 2 in free air; notes 2 and 3 note 4 PARAMETER CONDITIONS PMEGXX10BEA; PMEGXX10BEV VALUE UNIT 450 210 90 K/W K/W K/W PMEGXX10BEV (SOT666) Rth(j-a) Rth(j-s) Notes 1. Refer to SOD323 (SC-76) standard mounting conditions. 2. For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse power losses PR are a significant part of the total power losses. Nomograms for determining the reverse power losses PR and IF(AV) rating will be available on request. 3. Device mounted on an FR4 printed-circuit board with copper clad 10 x 10 mm. 4. Solder point of cathode tab. 5. Refer to SOT666 standard mounting conditions. 6. Only valid if pins 3 and 4 are connected in parallel (SOT666 package). CHARACTERISTICS Tamb = 25 C unless otherwise specified. PMEG2010BEA/ PMEG3010BEA/ PMEG4010BEA/ PMEG2010BEV PMEG3010BEV PMEG4010BEV UNIT TYP. VF forward voltage IF = 0.1 mA IF = 1 mA IF = 10 mA IF = 100 mA IF = 500 mA IF = 1 000 mA IR continuous reverse current VR = 10 V; note 1 VR = 20 V; note 1 VR = 30 V; note 1 VR = 40 V; note 1 Cd Note 1. Pulse test: tp 300 s; 0.02. diode capacitance VR = 1 V; f = 1 MHz 90 150 210 280 355 420 15 40 - - 66 MAX. 130 190 240 330 390 500 40 200 - - 80 TYP. 90 150 215 285 380 450 12 - 40 - 55 MAX. 130 200 250 340 430 560 30 - 150 - 70 TYP. 95 155 220 295 420 540 7 - - 30 43 MAX. 130 210 270 350 470 640 20 - - 100 50 mV mV mV mV mV mV A A A A pF thermal resistance from junction to ambient thermal resistance from junction to soldering point in free air; notes 2 and 5 in free air; notes 2 and 6 note 4 405 215 80 K/W K/W K/W SYMBOL PARAMETER CONDITIONS 2004 Jun 14 4 NXP Semiconductors Product data sheet 1 A very low VF MEGA Schottky barrier rectifier GRAPHICAL DATA 104 handbook, halfpage IF (mA) MHC673 PMEGXX10BEA; PMEGXX10BEV 105 handbook, halfpage IR (A) (1) MHC674 103 104 102 (1) (2) (3) 103 (2) 10 102 (3) 1 10 10-1 0 0.2 0.4 VF (V) 0.6 1 0 5 10 15 VR (V) 20 PMEG2010BEA/PMEG2010BEV (1) Tamb = 150 C. (2) Tamb = 85 C. (3) Tamb = 25 C. PMEG2010BEA/PMEG2010BEV (1) Tamb = 150 C. (2) Tamb = 85 C. (3) Tamb = 25 C. Fig.3 Forward current as a function of forward voltage; typical values. Fig.4 Reverse current as a function of reverse voltage; typical values. Cd handbook, halfpage (pF) 120 100 80 60 40 140 MHC675 104 handbook, halfpage IF (mA) MHC676 103 102 (1) (2) (3) 10 1 20 0 0 5 10 15 VR (V) 20 10-1 0 0.2 0.4 VF (V) 0.6 PMEG2010BEA/PMEG2010BEV Tamb = 25 C; f = 1 MHz. PMEG3010BEA/PMEG3010BEV (1) Tamb = 150 C. (2) Tamb = 85 C. (3) Tamb = 25 C. Fig.5 Diode capacitance as a function of reverse voltage; typical values. Fig.6 Forward current as a function of forward voltage; typical values. 2004 Jun 14 5 NXP Semiconductors Product data sheet 1 A very low VF MEGA Schottky barrier rectifier PMEGXX10BEA; PMEGXX10BEV 105 IR (A) 104 (1) MHC677 handbook, halfpage C 120 d (pF) 100 MHC678 80 103 (2) 60 102 40 10 (3) 20 1 0 5 10 15 20 25 30 VR (V) 0 0 5 10 15 VR (V) 20 PMEG3010BEA/PMEG3010BEV (1) Tamb = 150 C. (2) Tamb = 85 C. (3) Tamb = 25 C. PMEG3010BEA/PMEG3010BEV Tamb = 25 C; f = 1 MHz. Fig.7 Reverse current as a function of reverse voltage; typical values. Fig.8 Diode capacitance as a function of reverse voltage; typical values. 104 handbook, halfpage IF (mA) MHC679 105 handbook, halfpage IR (A) (1) MHC680 103 104 102 (1) (2) (3) 103 (2) 10 102 1 10 (3) 10-1 0 0.2 0.4 VF (V) 0.6 1 0 10 20 30 VR (V) 40 PMEG4010BEA/PMEG4010BEV (1) Tamb = 150 C. (2) Tamb = 85 C. (3) Tamb = 25 C. PMEG4010BEA/PMEG4010BEV (1) Tamb = 150 C. (2) Tamb = 85 C. (3) Tamb = 25 C. Fig.9 Forward current as a function of forward voltage; typical values. Fig.10 Reverse current as a function of reverse voltage; typical values. 2004 Jun 14 6 NXP Semiconductors Product data sheet 1 A very low VF MEGA Schottky barrier rectifier PMEGXX10BEA; PMEGXX10BEV handbook, halfpage 100 Cd (pF) 80 MHC681 60 40 20 0 0 5 10 15 VR (V) 20 PMEG4010BEA/PMEG4010BEV Tamb = 25 C; f = 1 MHz. Fig.11 Diode capacitance as a function of reverse voltage; typical values. 2004 Jun 14 7 NXP Semiconductors Product data sheet 1 A very low VF MEGA Schottky barrier rectifier PACKAGE OUTLINES Plastic surface-mounted package; 2 leads PMEGXX10BEA; PMEGXX10BEV SOD323 D A E X HD v M A Q 1 2 bp A A1 (1) c Lp detail X 0 1 scale 2 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.8 A1 max 0.05 bp 0.40 0.25 c 0.25 0.10 D 1.8 1.6 E 1.35 1.15 HD 2.7 2.3 Lp 0.45 0.15 Q 0.25 0.15 v 0.2 Note 1. The marking bar indicates the cathode OUTLINE VERSION SOD323 REFERENCES IEC JEDEC JEITA SC-76 EUROPEAN PROJECTION ISSUE DATE 03-12-17 06-03-16 2004 Jun 14 8 NXP Semiconductors Product data sheet 1 A very low VF MEGA Schottky barrier rectifier PMEGXX10BEA; PMEGXX10BEV Plastic surface-mounted package; 6 leads SOT666 D A E X S YS HE 6 5 4 pin 1 index A 1 e1 e 2 bp 3 wMA Lp detail X c 0 1 scale 2 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 0.6 0.5 bp 0.27 0.17 c 0.18 0.08 D 1.7 1.5 E 1.3 1.1 e 1.0 e1 0.5 HE 1.7 1.5 Lp 0.3 0.1 w 0.1 y 0.1 OUTLINE VERSION SOT666 REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 04-11-08 06-03-16 2004 Jun 14 9 NXP Semiconductors Product data sheet 1 A very low VF MEGA Schottky barrier rectifier DATA SHEET STATUS DOCUMENT STATUS(1) Objective data sheet Preliminary data sheet Product data sheet Notes PRODUCT STATUS(2) Development Qualification Production DEFINITION PMEGXX10BEA; PMEGXX10BEV This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DISCLAIMERS General Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 2004 Jun 14 10 NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com (c) NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands R76/04/pp11 Date of release: 2004 Jun 14 Document order number: 9397 750 13234 |
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